2sk3817 no.8055-1/4 sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ENN8055 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. d2404qa ts im tb-00000611 2sk3817 n-channel silicon mosfet general-purpose switching device applications features ? low on-resistance. ? ultrahigh-speed switching. ? 4v drive. ? motor drive, dc / dc converter. ? avalanche resistance guarantee. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 60 v gate-to-source voltage v gss 20 v drain current (dc) i d 60 a drain current (pulse) i dp pw 10 m s, duty cycle 1% 240 a allowable power dissipation p d 1.65 w tc=25 c65w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche enargy (single pulse) *1 e as 135 mj avalanche current *2 i av 60 a note : * 1 v dd =20v, l=50 m h, i av =60a * 2 l 50 m h, single pulse electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 60 v zero-gate voltage drain current i dss v ds =60v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 16v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 1.2 2.6 v forward transfer admittance ? yfs ? v ds =10v, i d =30a 24 40 s static drain-to-source on-state resistance r ds (on)1 i d =30a, v gs =10v 11.5 15 m w r ds (on)2 i d =30a, v gs =4v 16 22 m w marking : k3817 continued on next page. http://semicon.sanyo.com/en/network
2sk3817 no.8055-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit input capacitance ciss v ds =20v, f=1mhz 3500 pf output capacitance coss v ds =20v, f=1mhz 500 pf reverse transfer capacitance crss v ds =20v, f=1mhz 350 pf turn-on delay time t d (on) see specified test circuit. 26 ns rise time t r see specified test circuit. 230 ns turn-off delay time t d (off) see specified test circuit. 255 ns fall time t f see specified test circuit. 230 ns total gate charge qg v ds =30v, v gs =10v, i d =60a 67 nc gate-to-source charge qgs v ds =30v, v gs =10v, i d =60a 10.6 nc gate-to-drain miller charge qgd v ds =30v, v gs =10v, i d =60a 10 nc diode forward voltage v sd i s =60a, v gs =0 1.07 1.5 v package dimensions package dimensions unit : mm unit : mm 2093a 2090a switching time test circuit unclamped inductive test circuit 1 : gate 2 : drain 3 : source sanyo : smp 10.2 20.9 11.5 9.4 0.8 1.6 1.2 0.9 11.0 8.8 4.5 1.3 0.4 2.55 2.55 2.7 123 pw=10 m s d.c. 1% p. g 50 w g s d i d =30a r l =1.0 w v dd =30v v out 2sk3817 v in 10v 0v v in 50 w 3 50 w rg dut v dd l 15v 0v 1 : gate 2 : drain 3 : source sanyo : smp-fd 10.2 1.2 2.55 2.55 2.55 2.55 4.5 0 to 0.3 0.4 1.3 9.9 3.0 2.7 1.35 8.8 1.4 1.5max 0.8 0.8 123
2sk3817 no.8055-3/4 it07825 it07826 it07823 it07824 0.2 0.4 0.6 1.0 0.8 1.2 2.0 1.8 1.6 1.4 0 0 20 10 30 40 50 80 70 60 0.5 1.0 1.5 2.5 2.0 3.0 5.0 4.5 4.0 3.5 0 0 20 10 30 40 50 80 70 60 --50 --25 150 it07828 it07827 0.1 1.0 23 57 23 57 3 10 1.0 7 7 5 5 3 2 3 100 7 5 2 10 23 57 100 3456789 210 0 25 35 30 10 15 20 5 0 25 35 30 10 15 20 5 0 25 50 75 100 125 4v v gs =3v 6v 8v 10v tc= 25 c 25 c 25 c tc= --25 c --25 c 75 c tc= 75 c v ds =10v i d =30 a tc=75 c 25 c -- 25 c i d =30a, v gs =4v i d =30a, v gs =10v tc= --25 c 75 c 25 c v ds =10v it07829 0.1 23 1.0 57 2 3 57 2 3 57 10 100 10 100 1000 2 3 5 7 2 3 5 7 t d (off) t f t d (on) t r v dd =30v v gs =10v it07830 i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc ? y fs ? -- i d i f -- v sd ciss, coss, crss -- v ds sw time -- i d static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf drain current, i d -- a switching time, sw time -- ns case temperature, tc -- c 1.5 1.2 0.3 0.6 0.9 0 tc= 75 c 25 c -- 25 c v gs =0 030 10 15 20 25 5 1000 3 2 7 5 3 2 7 5 coss ciss crss 0.01 0.1 1.0 10 100 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 f=1mhz
2sk3817 no.8055-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of december, 2004. specifications and information herein are subject to change without notice. it07833 it07811 0 0 20 40 60 80 100 120 80 60 70 65 140 160 50 40 30 10 20 0 0 20 40 60 80 100 120 1.65 140 160 2.0 1.5 1.0 0.5 it07832 0.1 1.0 10 100 2 3 5 7 2 3 5 7 2 3 5 2 3 5 7 23 57 23 57 23 57 1.0 0.1 10 100 i dp =240a i d =60a 100 m s 1ms 10ms 100ms dc operation 10 m s operation in this area is limited by r ds (on). it07831 01020 40 30 50 60 80 70 0 2 4 6 8 9 1 3 5 7 10 v ds =30v i d =60a a s o p d -- ta p d -- tc v gs -- qg gate-to-source voltage, v gs -- v amibient tamperature, ta -- c allowable power dissipation, p d -- w case tamperature, tc -- c allowable power dissipation, p d -- w drain current, i d -- a tc=25 c single pulse total gate charge, qg -- nc drain-to-source voltage, v ds -- v note on usage : since the 2sk3817 is a mosfet product, please avoid using this device in the vicinity of highly charged objects.
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